IXFT320N10T2
- Manufacturer IXYS
- Part Number IXFT320N10T2
- Description MOSFET Trench T2 HiperFET Power MOSFET
- Category MOSFET
Specifications
| Package | TO-268-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 14 mm |
| Qg - Gate Charge | 430 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | TrenchT2 HiperFET Power MOSFET |
| Fall Time | 73 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.229281 oz |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 80 S |
| Id - Continuous Drain Current | 320 A |
| Length | 16.05 mm |
| Rds On - Drain-Source Resistance | 3.5 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 73 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFT320N10 |
| Height | 5.1 mm |
| Typical Turn-On Delay Time | 36 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 kW |
| Rise Time | 46 ns |
| Technology | Si |
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