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IXFR64N50P

IXFR64N50P

  • Manufacturer IXYS
  • Part Number IXFR64N50P
  • Description MOSFET 500V 64A
  • Category MOSFET
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 500 V
Transistor Polarity N-Channel
Width 5.21 mm
Vgs - Gate-Source Voltage 30 V
Fall Time 22 ns
Mounting Style Through Hole
Product Category MOSFET
Brand IXYS
Unit Weight 0.186952 oz
Number of Channels 1 Channel
Tradename HiPerFET
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 50 S
Id - Continuous Drain Current 35 A
Length 16.13 mm
Rds On - Drain-Source Resistance 95 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 85 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series IXFR64N50
Height 21.34 mm
Typical Turn-On Delay Time 30 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 300 W
Rise Time 25 ns
Technology Si

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