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IXFR38N80Q2

IXFR38N80Q2

  • Manufacturer IXYS
  • Part Number IXFR38N80Q2
  • Description MOSFET 38 Amps 800V 0.24 Rds
  • Category MOSFET
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 800 V
Transistor Polarity N-Channel
Width 5.21 mm
Vgs - Gate-Source Voltage 30 V
Fall Time 12 ns
Mounting Style Through Hole
Product Category MOSFET
Brand IXYS
Unit Weight 0.056438 oz
Number of Channels 1 Channel
Tradename HyperFET
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Id - Continuous Drain Current 28 A
Length 16.13 mm
Rds On - Drain-Source Resistance 300 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 60 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series IXFR38N80
Height 21.34 mm
Typical Turn-On Delay Time 20 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 416 W
Rise Time 16 ns
Technology Si

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