IXFR32N100Q3
- Manufacturer IXYS
- Part Number IXFR32N100Q3
- Description MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 195 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.056438 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 23 A |
| Rds On - Drain-Source Resistance | 350 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | IXFR32N100 |
| Pd - Power Dissipation | 570 W |
| Rise Time | 300 ns |
| Technology | Si |
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