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IXFR140N20P

IXFR140N20P

  • Manufacturer IXYS
  • Part Number IXFR140N20P
  • Description MOSFET 75 Amps 200V 0.018 Rds
  • Category MOSFET
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 30
Vds - Drain-Source Breakdown Voltage 200 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 5 V
Width 5.21 mm
Qg - Gate Charge 240 nC
Vgs - Gate-Source Voltage 20 V
Type PolarHT HiPerFET Power MOSFET
Fall Time 90 ns
Mounting Style Through Hole
Product Category MOSFET
Brand IXYS
Unit Weight 0.056438 oz
Number of Channels 1 Channel
Tradename HiPerFET
Configuration Single
Maximum Operating Temperature + 175 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 50 S
Id - Continuous Drain Current 90 A
Length 16.13 mm
Rds On - Drain-Source Resistance 22 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 150 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series IXFR140N20
Height 21.34 mm
Typical Turn-On Delay Time 30 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 300 W
Rise Time 35 ns
Technology Si

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