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IXFQ120N25X3

  • Manufacturer IXYS
  • Part Number IXFQ120N25X3
  • Description MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
  • Category MOSFET
Specifications
Package TO-39-3
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 250 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 122 nC
Vgs - Gate-Source Voltage 20 V
Fall Time 12 ns
Mounting Style Through Hole
Product Category MOSFET
Brand IXYS
Number of Channels 1 Channel
Tradename HiPerFET
Product Type MOSFET
Forward Transconductance - Min 54 S
Id - Continuous Drain Current 120 A
Rds On - Drain-Source Resistance 12 mOhms
RoHS Y
Typical Turn-Off Delay Time 100 ns
Subcategory MOSFETs
Channel Mode Enhancement
Typical Turn-On Delay Time 29 ns
Pd - Power Dissipation 480 W
Rise Time 32 ns
Technology Si

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