IXFP130N10T2
- Manufacturer IXYS
- Part Number IXFP130N10T2
- Description MOSFET Trench T2 HiperFET Power MOSFET
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 4.83 mm |
| Qg - Gate Charge | 130 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | TrenchT2 HiperFET Power MOSFET |
| Fall Time | 25 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.012346 oz |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 45 S |
| Id - Continuous Drain Current | 130 A |
| Length | 10.66 mm |
| Rds On - Drain-Source Resistance | 9.1 mOhms |
| Typical Turn-Off Delay Time | 24 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFP130N10 |
| Height | 16 mm |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 360 W |
| Rise Time | 38 ns |
| Technology | Si |
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