IXFP10N60P
- Manufacturer IXYS
- Part Number IXFP10N60P
- Description MOSFET HiPERFET Id10 BVdass600
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 4.83 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 21 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.081130 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 11 S |
| Id - Continuous Drain Current | 10 A |
| Length | 10.66 mm |
| Rds On - Drain-Source Resistance | 740 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 65 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFP10N60 |
| Height | 9.15 mm |
| Typical Turn-On Delay Time | 23 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 W |
| Rise Time | 27 ns |
| Technology | Si |
Need pricing on IXFP10N60P?
Tell us your quantity and target price. We reply the same business day.