IXFN82N60Q3
- Manufacturer IXYS
- Part Number IXFN82N60Q3
- Description MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 275 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 66 A |
| Rds On - Drain-Source Resistance | 75 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | IXFN82N60 |
| Pd - Power Dissipation | 960 W |
| Rise Time | 300 ns |
| Technology | Si |
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