IXFN70N120SK
- Manufacturer IXYS
- Part Number IXFN70N120SK
- Description MOSFET SiC Power MOSFET
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 161 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 68 A |
| Rds On - Drain-Source Resistance | 25 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Technology | SiC |
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