IXFN56N90P
- Manufacturer IXYS
- Part Number IXFN56N90P
- Description MOSFET PolarHV HiPerFETs 900V 56A
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 6.5 V |
| Qg - Gate Charge | 375 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 38 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 44 S |
| Id - Continuous Drain Current | 56 A |
| Rds On - Drain-Source Resistance | 135 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 93 ns |
| Subcategory | MOSFETs |
| Series | IXFN56N90 |
| Typical Turn-On Delay Time | 74 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 kW |
| Rise Time | 80 ns |
| Technology | Si |
Need pricing on IXFN56N90P?
Tell us your quantity and target price. We reply the same business day.