IXFN50N120SIC
- Manufacturer IXYS
- Part Number IXFN50N120SIC
- Description MOSFET SICARBIDE-DISCRETE MOSFET (MIN
- Category MOSFET
Specifications
| Package | SOT-227B-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 100 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 19 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Tradename | 0 |
| Configuration | Single |
| Maximum Operating Temperature | + 155 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 47 A |
| Rds On - Drain-Source Resistance | 50 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 75 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 23 ns |
| Minimum Operating Temperature | - 55 C |
| Rise Time | 9 ns |
| Technology | SiC |
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