IXFN360N15T2
- Manufacturer IXYS
- Part Number IXFN360N15T2
- Description MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Transistor Polarity | N-Channel |
| Type | GigaMOS Trench T2 HiperFet |
| Fall Time | 265 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 310 A |
| Rds On - Drain-Source Resistance | 4 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | IXFN360N15 |
| Minimum Operating Temperature | - 55 C |
| Rise Time | 170 ns |
| Technology | Si |
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