IXFN360N10T
- Manufacturer IXYS
- Part Number IXFN360N10T
- Description MOSFET 360 Amps 100V
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 525 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Type | Power MOSFET |
| Fall Time | 160 ns |
| Mounting Style | Chassis Mount |
| Product | MOSFET Power |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 110 S |
| Id - Continuous Drain Current | 360 A |
| Rds On - Drain-Source Resistance | 2.6 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 80 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFN360N10 |
| Typical Turn-On Delay Time | 47 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 830 W |
| Rise Time | 100 ns |
| Technology | Si |
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