IXFN280N085
- Manufacturer IXYS
- Part Number IXFN280N085
- Description MOSFET 280 Amps 85V 0.0044 Rds
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 100 |
| Vds - Drain-Source Breakdown Voltage | 85 V |
| Transistor Polarity | N-Channel |
| Width | 25.42 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 33 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HyperFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 280 A |
| Length | 38.23 mm |
| Rds On - Drain-Source Resistance | 4.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 200 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFN280N085 |
| Height | 9.6 mm |
| Typical Turn-On Delay Time | 140 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 700 W |
| Rise Time | 95 ns |
| Technology | Si |
Need pricing on IXFN280N085?
Tell us your quantity and target price. We reply the same business day.