IXFN26N120P
- Manufacturer IXYS
- Part Number IXFN26N120P
- Description MOSFET 26 Amps 1200V
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Transistor Polarity | N-Channel |
| Width | 25.42 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 58 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 23 A |
| Length | 38.23 mm |
| Rds On - Drain-Source Resistance | 460 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 76 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFN26N120 |
| Height | 9.6 mm |
| Typical Turn-On Delay Time | 56 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 695 W |
| Rise Time | 55 ns |
| Technology | Si |
Need pricing on IXFN26N120P?
Tell us your quantity and target price. We reply the same business day.