IXFN210N20P
- Manufacturer IXYS
- Part Number IXFN210N20P
- Description MOSFET 188 Amps 200V 0.0105 Rds
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 188 A |
| Rds On - Drain-Source Resistance | 10.5 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | IXFN210N20 |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.07 kW |
| Technology | Si |
Need pricing on IXFN210N20P?
Tell us your quantity and target price. We reply the same business day.