IXFN200N10P
- Manufacturer IXYS
- Part Number IXFN200N10P
- Description MOSFET 200 Amps 100V 0.0075 Rds
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 25.42 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 90 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 200 A |
| Length | 38.23 mm |
| Rds On - Drain-Source Resistance | 7.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 150 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFN200N10 |
| Height | 9.6 mm |
| Typical Turn-On Delay Time | 30 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 680 W |
| Rise Time | 35 ns |
| Technology | Si |
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