IXFN170N65X2
- Manufacturer IXYS
- Part Number IXFN170N65X2
- Description MOSFET 650V/170A miniBLOC SOT-227
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 434 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 6 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 55 S |
| Id - Continuous Drain Current | 170 A |
| Rds On - Drain-Source Resistance | 13 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 133 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 650V Ultra Junction X2 |
| Typical Turn-On Delay Time | 60 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.17 kW |
| Rise Time | 15 ns |
| Technology | Si |
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