IXFN120N65X2
- Manufacturer IXYS
- Part Number IXFN120N65X2
- Description MOSFET 650V/108A Ultra Junction X2-Class
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Qg - Gate Charge | 225 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 12 ns |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 46 S |
| Id - Continuous Drain Current | 108 A |
| Rds On - Drain-Source Resistance | 24 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 86 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 650V Ultra Junction X2 |
| Typical Turn-On Delay Time | 64 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 890 W |
| Rise Time | 23 ns |
| Technology | Si |
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