IXFK80N60P3
- Manufacturer IXYS
- Part Number IXFK80N60P3
- Description MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET
- Category MOSFET
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 190 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 8 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.264555 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 90 S, 55 S |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 70 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | IXFK80N60 |
| Pd - Power Dissipation | 1.3 kW |
| Rise Time | 25 ns |
| Technology | Si |
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