IXFK80N50P
- Manufacturer IXYS
- Part Number IXFK80N50P
- Description MOSFET 500V 80A
- Category MOSFET
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Width | 5.13 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 16 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 70 S |
| Id - Continuous Drain Current | 80 A |
| Length | 19.96 mm |
| Rds On - Drain-Source Resistance | 65 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFK80N50 |
| Height | 26.16 mm |
| Typical Turn-On Delay Time | 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1040 W |
| Rise Time | 27 ns |
| Technology | Si |
Need pricing on IXFK80N50P?
Tell us your quantity and target price. We reply the same business day.