IXFK32N100P
- Manufacturer IXYS
- Part Number IXFK32N100P
- Description MOSFET 32 Amps 1000V 0.32 Rds
- Category MOSFET
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 6.5 V |
| Width | 5.13 mm |
| Qg - Gate Charge | 225 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | Polar Power MOSFET HiPerFET |
| Fall Time | 43 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.352740 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 32 A |
| Length | 19.96 mm |
| Rds On - Drain-Source Resistance | 320 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 76 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFK32N100 |
| Height | 26.16 mm |
| Typical Turn-On Delay Time | 50 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 960 W |
| Rise Time | 55 ns |
| Technology | Si |
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