IXFH80N65X2-4
- Manufacturer IXYS
- Part Number IXFH80N65X2-4
- Description MOSFET 650V/80A TO-247-4L
- Category MOSFET
Specifications
| Package | TO-247-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 140 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 11 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 33 S |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 38 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 650V Ultra Junction X2 |
| Typical Turn-On Delay Time | 32 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 890 W |
| Rise Time | 24 ns |
| Technology | Si |
Need pricing on IXFH80N65X2-4?
Tell us your quantity and target price. We reply the same business day.