IXFH20N100P
- Manufacturer IXYS
- Part Number IXFH20N100P
- Description MOSFET 20 Amps 1000V 1 Rds
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 6.5 V |
| Width | 5.3 mm |
| Qg - Gate Charge | 126 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | Polar Power MOSFET HiPerFET |
| Fall Time | 45 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.229281 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 20 A |
| Length | 16.26 mm |
| Rds On - Drain-Source Resistance | 570 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 56 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFH20N100 |
| Height | 21.46 mm |
| Typical Turn-On Delay Time | 40 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 660 W |
| Rise Time | 37 ns |
| Technology | Si |
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