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IXFH150N15P

  • Manufacturer IXYS
  • Part Number IXFH150N15P
  • Description MOSFET 170 Amps 150V 0.013 Rds
  • Category MOSFET
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 150 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 5 V
Width 5.3 mm
Qg - Gate Charge 190 nC
Vgs - Gate-Source Voltage 20 V
Type PolarHT HiPerFET Power MOSFET
Fall Time 28 ns
Mounting Style Through Hole
Product Category MOSFET
Brand IXYS
Unit Weight 0.229281 oz
Number of Channels 1 Channel
Tradename HiPerFET
Configuration Single
Maximum Operating Temperature + 175 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 55 S
Id - Continuous Drain Current 150 A
Length 16.26 mm
Rds On - Drain-Source Resistance 13 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 100 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series IXFH150N15
Height 21.46 mm
Typical Turn-On Delay Time 30 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 714 W
Rise Time 33 ns
Technology Si

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