IXFG55N50
- Manufacturer IXYS
- Part Number IXFG55N50
- Description MOSFET 48 Amps 500V 0.1 Rds
- Category MOSFET
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 25 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Width | 5.21 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 45 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.264555 oz |
| Number of Channels | 1 Channel |
| Tradename | HyperFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 48 A |
| Length | 20.29 mm |
| Rds On - Drain-Source Resistance | 90 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 120 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFG55N50 |
| Height | 26.42 mm |
| Typical Turn-On Delay Time | 45 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 400 W |
| Rise Time | 60 ns |
| Technology | Si |
Need pricing on IXFG55N50?
Tell us your quantity and target price. We reply the same business day.