IXFB52N90P
- Manufacturer IXYS
- Part Number IXFB52N90P
- Description MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
- Category MOSFET
Specifications
| Package | PLUS-264-3 |
| Packaging | Tube |
| Min. Pack | 25 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 6.5 V |
| Width | 5.31 mm |
| Qg - Gate Charge | 308 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 42 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.373904 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 35 S |
| Id - Continuous Drain Current | 52 A |
| Length | 20.29 mm |
| Rds On - Drain-Source Resistance | 160 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 95 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFB52N90 |
| Height | 26.59 mm |
| Typical Turn-On Delay Time | 63 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 kW |
| Rise Time | 80 ns |
| Technology | Si |
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