IXFB170N30P
- Manufacturer IXYS
- Part Number IXFB170N30P
- Description MOSFET Polar Power MOSFET HiPerFET
- Category MOSFET
Specifications
| Package | PLUS-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 300 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 5.31 mm |
| Qg - Gate Charge | 258 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | Polar Power MOSFET HiPerFET |
| Fall Time | 16 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.056438 oz |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 57 S |
| Id - Continuous Drain Current | 170 A |
| Length | 20.29 mm |
| Rds On - Drain-Source Resistance | 18 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 79 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFB170N30 |
| Height | 26.59 mm |
| Typical Turn-On Delay Time | 41 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 kW |
| Rise Time | 29 ns |
| Technology | Si |
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