IXFB100N50P
- Manufacturer IXYS
- Part Number IXFB100N50P
- Description MOSFET 100 Amps 500V 0.05 Ohms Rds
- Category MOSFET
Specifications
| Package | PLUS-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 5.31 mm |
| Qg - Gate Charge | 240 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | PolarHV HiPerFET Power MOSFET |
| Fall Time | 26 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.056438 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 50 S |
| Id - Continuous Drain Current | 100 A |
| Length | 20.29 mm |
| Rds On - Drain-Source Resistance | 49 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 110 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFB100N50 |
| Height | 26.59 mm |
| Typical Turn-On Delay Time | 36 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 kW |
| Rise Time | 29 ns |
| Technology | Si |
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