IXFA6N120P
- Manufacturer IXYS
- Part Number IXFA6N120P
- Description MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 10.41 mm |
| Qg - Gate Charge | 92 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | Polar HiPerFET Power MOSFET |
| Fall Time | 14 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.081130 oz |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 3 S |
| Id - Continuous Drain Current | 6 A |
| Length | 9.65 mm |
| Rds On - Drain-Source Resistance | 2.75 Ohms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 60 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXFA6N120 |
| Height | 4.83 mm |
| Typical Turn-On Delay Time | 24 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 11 ns |
| Technology | Si |
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