IXFA3N120-TRR
- Manufacturer IXYS
- Part Number IXFA3N120-TRR
- Description MOSFET IXFA3N120 TRR
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Reel |
| Min. Pack | 800 |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 39 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 18 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 1.5 S |
| Id - Continuous Drain Current | 3 A |
| Rds On - Drain-Source Resistance | 4.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 32 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | HiPerFET |
| Typical Turn-On Delay Time | 17 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 W |
| Rise Time | 15 ns |
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