IXDR35N60BD1
- Manufacturer IXYS
- Part Number IXDR35N60BD1
- Description IGBT Transistors 35 Amps 600V
- Category IGBT Transistors
Specifications
| Package | ISOPLUS-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 500 nA |
| Continuous Collector Current Ic Max | 48 A |
| Width | 5.21 mm |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 38 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 0.186952 oz |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| Length | 16.13 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 38 A |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | IXDR35N60B |
| Height | 21.34 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Technology | Si |
Need pricing on IXDR35N60BD1?
Tell us your quantity and target price. We reply the same business day.