IXBT2N250-TR
- Manufacturer IXYS
- Part Number IXBT2N250-TR
- Description MOSFET IXBT2N250 TR
- Category MOSFET
Specifications
| Package | TO-268-3 |
| Packaging | Reel |
| Min. Pack | 400 |
| Vds - Drain-Source Breakdown Voltage | 2500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 10.6 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 178 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 0.85 S |
| Id - Continuous Drain Current | 5 A |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 74 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BIMOSFET |
| Typical Turn-On Delay Time | 30 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 32 W |
| Rise Time | 280 ns |
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