IXBT10N170
- Manufacturer IXYS
- Part Number IXBT10N170
- Description IGBT Transistors 10 Amps 1700V 2.3 Rds
- Category IGBT Transistors
Specifications
| Package | TO-268-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 40 A |
| Width | 14 mm |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 20 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 0.158733 oz |
| Collector- Emitter Voltage VCEO Max | 1.7 kV |
| Tradename | BIMOSFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| Length | 16.05 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 20 A |
| Collector-Emitter Saturation Voltage | 3.4 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | IXBT10N170 |
| Height | 5.1 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 140 W |
| Technology | Si |
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