IXBK55N300
- Manufacturer IXYS
- Part Number IXBK55N300
- Description IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
- Category IGBT Transistors
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 200 nA |
| Continuous Collector Current Ic Max | 130 A |
| Width | 5.31 mm |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 130 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 0.264555 oz |
| Collector- Emitter Voltage VCEO Max | 3 kV |
| Tradename | BIMOSFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 20.29 mm |
| Maximum Gate Emitter Voltage | 25 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | Very High Voltage |
| Height | 26.59 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 W |
| Technology | Si |
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