IXBF55N300
- Manufacturer IXYS
- Part Number IXBF55N300
- Description IGBT Transistors High Voltage High Gain BIMOSFET
- Category IGBT Transistors
Specifications
| Package | ISOPLUS i4-PAK-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 200 nA |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | Very High Voltage |
| Maximum Operating Temperature | + 150 C |
| Brand | IXYS |
| Pd - Power Dissipation | 357 W |
| Continuous Collector Current at 25 C | 86 A |
| Collector- Emitter Voltage VCEO Max | 3 kV |
| Mounting Style | Through Hole |
| Tradename | BIMOSFET |
| Maximum Gate Emitter Voltage | 25 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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