IXBF32N300
- Manufacturer IXYS
- Part Number IXBF32N300
- Description IGBT Transistors
- Category IGBT Transistors
Specifications
| Package | ISOPLUS-i4-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 100 nA |
| Continuous Collector Current Ic Max | 40 A |
| Width | 5.21 mm |
| Continuous Collector Current at 25 C | 40 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 0.229281 oz |
| Collector- Emitter Voltage VCEO Max | 3 kV |
| Tradename | BIMOSFET |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 150 C |
| Length | 20.29 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 2.8 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | Very High Voltage |
| Height | 21.34 mm |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 160 W |
| Technology | Si |
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