IXA45IF1200HB
- Manufacturer IXYS
- Part Number IXA45IF1200HB
- Description IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 500 nA |
| Continuous Collector Current Ic Max | 45 A |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 78 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 1.340411 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Tradename | XPT |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | IXA45IF1200HB |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 325 W |
| Technology | Si |
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