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IRG4PH50SPBF

  • Manufacturer Infineon / IR
  • Part Number IRG4PH50SPBF
  • Description IGBT Transistors 1200V DC-1kHz
  • Category IGBT Transistors
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 1
Gate-Emitter Leakage Current 100 nA
Continuous Collector Current Ic Max 33 A
Width 5.31 mm (Max)
Part # Aliases SP001533562
Mounting Style Through Hole
Continuous Collector Current at 25 C 57 A
Product Category IGBT Transistors
Brand Infineon / IR
Unit Weight 1.340411 oz
Collector- Emitter Voltage VCEO Max 1.2 kV
Product Type IGBT Transistors
Maximum Operating Temperature + 150 C
Length 15.87 mm (Max)
Maximum Gate Emitter Voltage 20 V
RoHS Y
Collector-Emitter Saturation Voltage 1.75 V
Configuration Single
Subcategory IGBTs
Height 20.7 mm (Max)
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 200 W
Technology Si

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