IRG4PF50WDPBF
- Manufacturer Infineon Technologies
- Part Number IRG4PF50WDPBF
- Description IGBT Transistors 900V Warp 20-100kHz
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 51 A |
| Width | 5.31 mm |
| Part # Aliases | SP001547862 |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 51 A |
| Product Category | IGBT Transistors |
| Brand | Infineon Technologies |
| Unit Weight | 1.340411 oz |
| Collector- Emitter Voltage VCEO Max | 900 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 150 C |
| Length | 15.87 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 2.25 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Height | 20.7 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 W |
| Technology | Si |
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