IRFS38N20DTRRP
- Manufacturer Infineon / IR
- Part Number IRFS38N20DTRRP
- Description MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 800 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 6.22 mm |
| Qg - Gate Charge | 60 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | SP001565034 |
| Fall Time | 47 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon / IR |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 17 S |
| Id - Continuous Drain Current | 44 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 54 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 29 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 2.3 mm |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.8 W |
| Rise Time | 95 ns |
| Technology | Si |
Need pricing on IRFS38N20DTRRP?
Tell us your quantity and target price. We reply the same business day.