IRFPS3810PBF
- Manufacturer Infineon Technologies
- Part Number IRFPS3810PBF
- Description MOSFET 100V SINGLE N-CH 9mOhms 260nC
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 5.31 mm |
| Qg - Gate Charge | 260 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Part # Aliases | SP001566934 |
| Type | HEXFET Power MOSFET |
| Fall Time | 140 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 141 A |
| Length | 15.87 mm |
| Rds On - Drain-Source Resistance | 9 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 20.7 mm |
| Typical Turn-On Delay Time | 24 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 441 W |
| Rise Time | 270 ns |
| Technology | Si |
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