IRFP048NPBF
- Manufacturer Infineon Technologies
- Part Number IRFP048NPBF
- Description MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 5.31 mm |
| Qg - Gate Charge | 89 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | |
| Type | HEXFET Power MOSFET |
| Fall Time | 48 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 22 S |
| Id - Continuous Drain Current | 64 A |
| Length | 15.87 mm |
| Rds On - Drain-Source Resistance | 16 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 32 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 20.7 mm |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 140 W |
| Rise Time | 78 ns |
| Technology | Si |
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