IRFHM792TRPBF
- Manufacturer Infineon Technologies
- Part Number IRFHM792TRPBF
- Description MOSFET 100V DUAL N-CH HEXFET
- Category MOSFET
Specifications
| Package | PQFN-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 3.3 mm |
| Qg - Gate Charge | 4.2 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | |
| Fall Time | 2.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 3.5 S |
| Id - Continuous Drain Current | 2.3 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 195 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 5.2 ns |
| Subcategory | MOSFETs |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 3.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.3 W |
| Rise Time | 4.7 ns |
| Technology | Si |
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