IRFH7911TRPBF
- Manufacturer Infineon / IR
- Part Number IRFH7911TRPBF
- Description MOSFET 30V DUAL N-CH HEXFET 8.6mOhms 8.3nC
- Category MOSFET
Specifications
| Package | PQFN-18 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.35 V |
| Width | 5 mm |
| Qg - Gate Charge | 8.3 nC, 34 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001577920 |
| Fall Time | 5.9 ns, 14 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon / IR |
| Number of Channels | 2 Channel |
| Tradename | StrongIRFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 17 S, 106 S |
| Id - Continuous Drain Current | 13 A, 28 A |
| Length | 6 mm |
| Rds On - Drain-Source Resistance | 8.6 mOhms, 3 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 12 ns, 28 ns |
| Subcategory | MOSFETs |
| Height | 1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 12 ns, 22 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.4 W, 3.4 W |
| Rise Time | 15 ns, 35 ns |
| Technology | Si |
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