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IRFH4210DTRPBF

  • Manufacturer Infineon / IR
  • Part Number IRFH4210DTRPBF
  • Description MOSFET 25V Single N-Ch HEXFET PWR 50A
  • Category MOSFET
Specifications
Package PQFN-8
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 25 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 1.6 V
Width 5 mm
Qg - Gate Charge 77 nC
Vgs - Gate-Source Voltage 20 V
Part # Aliases SP001575718
Fall Time 16 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Infineon / IR
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 392 S
Id - Continuous Drain Current 44 A
Length 6 mm
Rds On - Drain-Source Resistance 1.1 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 24 ns
Subcategory MOSFETs
Height 0.83 mm
Packaging
Typical Turn-On Delay Time 19 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 3.5 W
Rise Time 45 ns
Technology Si

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