IRFBG30PBF
- Manufacturer Vishay / Siliconix
- Part Number IRFBG30PBF
- Description MOSFET N-CH 1000V HEXFET MOSFET
- Category MOSFET
Specifications
| Package | TO-220AB-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 80 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 29 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 2.1 S |
| Id - Continuous Drain Current | 3.1 A |
| Rds On - Drain-Source Resistance | 5 Ohms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 89 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IRFBG |
| Typical Turn-On Delay Time | 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Rise Time | 25 ns |
| Technology | Si |
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