IRF6726MTRPBF
- Manufacturer Infineon / IR
- Part Number IRF6726MTRPBF
- Description MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- Category MOSFET
Specifications
| Package | DirectFET-MT |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V |
| Width | 5.05 mm |
| Qg - Gate Charge | 51 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001528276 |
| Fall Time | 17 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon / IR |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 150 S |
| Id - Continuous Drain Current | 180 A |
| Length | 6.35 mm |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Subcategory | MOSFETs |
| Height | 0.7 mm |
| Packaging | |
| Typical Turn-On Delay Time | 20 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 89 W |
| Rise Time | 30 ns |
| Technology | Si |
Need pricing on IRF6726MTRPBF?
Tell us your quantity and target price. We reply the same business day.