IRF6718L2TRPBF
- Manufacturer Infineon Technologies
- Part Number IRF6718L2TRPBF
- Description MOSFET 25V 1 N-CH HEXFET 0.7mOhms 64nC
- Category MOSFET
Specifications
| Package | DirectFET-L6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.9 V |
| Width | 7.1 mm |
| Qg - Gate Charge | 64 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SP001523928 |
| Fall Time | 53 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | DirectFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 820 S |
| Id - Continuous Drain Current | 270 A |
| Length | 9.15 mm |
| Rds On - Drain-Source Resistance | 1 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 47 ns |
| Subcategory | MOSFETs |
| Height | 0.74 mm |
| Packaging | |
| Typical Turn-On Delay Time | 67 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 4.3 W |
| Rise Time | 140 ns |
| Technology | Si |
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